Title :
Total dose and transient radiation effects on GaAs MMICs
Author :
Meulenberg, Andrew ; Hung, Hing-Loi A. ; Peterson, Kent E. ; Anderson, Wallace T.
Author_Institution :
Comsat Lab., Clarksburg, MD, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
To elucidate the effects of radiation on GaAs monolithic microwave integrated circuits (MMICs), radiation-induced changes in DC parameters of test FETs and in the measured microwave performance of MMICs were compared. Changes in material parameters determined from the DC results were used to model the observed microwave performance degradation. In addition, the effect of accumulated radiation damage in MMICs was studied in terms of the amplifier response to transient radiation pulses. The effect of 1-MeV electron irradiation on microwave response and transient radiation pulse response was measured in 0.5- to 12.5-GHz distributed amplifiers (ion-implanted) and in 28-GHz power amplifiers (with epitaxially grown active layers)
Keywords :
III-V semiconductors; MMIC; electron beam effects; field effect integrated circuits; gallium arsenide; ion implantation; microwave amplifiers; radiation hardening (electronics); vapour phase epitaxial growth; 0.5 to 12.5 GHz; 1 MeV; 1-MeV electron irradiation; 28 GHz; DC parameters; GaAs integrated circuits; MMICs; amplifier response; distributed amplifiers; effect of accumulated radiation damage; epitaxially grown active layers; ion-implanted; measured microwave performance; microwave performance degradation; microwave response; monolithic microwave integrated circuits; power amplifiers; radiation-induced changes; semiconductors; test FETs; total dose radiation effects; transient radiation effects; transient radiation pulse response; transient radiation pulses; Circuit testing; Distributed amplifiers; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave integrated circuits; Microwave measurements; Pulse amplifiers; Pulse measurements; Radiation effects;
Journal_Title :
Electron Devices, IEEE Transactions on
