DocumentCode
1399682
Title
InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 μm for high-speed and low-voltage-operation optical receiver
Author
Nakata, T. ; Watanabe, I. ; Makita, K. ; Torikai, T.
Author_Institution
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan
Volume
36
Issue
21
fYear
2000
fDate
10/12/2000 12:00:00 AM
Firstpage
1807
Lastpage
1809
Abstract
We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 μm and achieved 18.8 V operation. With high speed and a high GB product of 140 GHz. This makes it possible to realise a compact 10 Gbit/s APD receiver
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; 0.1 mum; 10 Gbit/s; 18.8 V; Gbit/s APD receiver; InAlAs; InAlAs avalanche photodiodes; InAlAs multiplication layer; high-speed; low-voltage-operation optical receiver; optical receivers; separated absorption and multiplication avalanche photodiode; very thin multiplication layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001278
Filename
878650
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