Title :
InAlAs avalanche photodiodes with very thin multiplication layer of 0.1 μm for high-speed and low-voltage-operation optical receiver
Author :
Nakata, T. ; Watanabe, I. ; Makita, K. ; Torikai, T.
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
10/12/2000 12:00:00 AM
Abstract :
We have developed a separated absorption and multiplication (SAM) avalanche photodiode (APD) with the thinnest reported InAlAs multiplication layer of 0.1 μm and achieved 18.8 V operation. With high speed and a high GB product of 140 GHz. This makes it possible to realise a compact 10 Gbit/s APD receiver
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; 0.1 mum; 10 Gbit/s; 18.8 V; Gbit/s APD receiver; InAlAs; InAlAs avalanche photodiodes; InAlAs multiplication layer; high-speed; low-voltage-operation optical receiver; optical receivers; separated absorption and multiplication avalanche photodiode; very thin multiplication layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001278
