• DocumentCode
    1399688
  • Title

    InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

  • Author

    Ito, H. ; Furuta, T. ; Kodama, S. ; Ishibashi, T.

  • Author_Institution
    NTT Photonics Labs., Kanagawa, Japan
  • Volume
    36
  • Issue
    21
  • fYear
    2000
  • fDate
    10/12/2000 12:00:00 AM
  • Firstpage
    1809
  • Lastpage
    1810
  • Abstract
    The authors have fabricated an InP-InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97ps. Both of which are record values for photodetectors operating at a wavelength of 1.55 μm. The average electron velocity in the depletion region is estimated to be 3.0×107 cm/s
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical receivers; photodetectors; photodiodes; 0.97 ps; 1.55 mum; 310 GHz; GHz bandwidth; InP-InGaAs; InP/InGaAs uni-travelling-carrier photodiode; average electron velocity; depletion region; photodetectors; pulse width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001274
  • Filename
    878651
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1399688