Title :
Improved BSIM3v3 model for RF MOSFET IC simulation
Author :
Lee, Seonghearn ; Kim, Cheon Soo ; Yu, Hyun Kyu
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki, South Korea
fDate :
10/12/2000 12:00:00 AM
Abstract :
An improved BSIM3v3 RF model including external junction diodes to a conventional substrate network is proposed. This model results in much better agreements with the measured output resistance and capacitance than other published models. The accuracy of the model is also demonstrated by observing good agreement between the measured and modelled S-parameters up to 10 GHz
Keywords :
MOS integrated circuits; S-parameters; capacitance; integrated circuit modelling; microwave integrated circuits; 10 GHz; BSIM3v3 model; RF MOSFET IC simulation; S-parameters; capacitance; external junction diodes; output resistance; substrate network;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001280
