Title :
Structure and thermal stability of Ni/Si1-xGex contacts for VLSI applications
Author :
Qin, Ming ; Poon, V.M.C. ; Yuen, C.Y.
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
fDate :
10/12/2000 12:00:00 AM
Abstract :
The sheet resistance of a Si1-xGex film is measured using the four-point probe method and is shown to remain stable at 350-600°C. X-ray photoelectron spectroscopy analysis suggests that the phase of the contact formed at 450°C is Ni2(Si 1-xGex) or a mixture of Ni2Si and Ni 2Ge, but that a mixture of silicide and germanium is formed at 250°C
Keywords :
Ge-Si alloys; VLSI; X-ray photoelectron spectra; contact resistance; interface structure; metallisation; nickel; semiconductor materials; semiconductor-metal boundaries; sintering; thermal stability; 350 to 600 C; Ni-GeSi; Ni/Si1-xGex contacts; Ni2(Si1-xGex); Ni2Ge; Ni2GeSi; Ni2Si; Si1-xGex film; VLSI applications; X-ray photoelectron spectroscopy; contact; four-point probe method; sheet resistance; silicide; structure; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001256
