Operation of a ballistic heterojunction permeable base transistor

Author

Wernersson, Lars-Erik ; Litwin, Andrej ; Samuelson, Lars ; Xu, Hongqi

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

1829

Lastpage

1836

Abstract

A ballistic heterojunction permeable base transistor (HPBT) is proposed and an analytical and numerical analysis of the device is performed. The new feature of the device structure is an AlGaAs hetero-emitter for injection of hot electrons into a 150-nm-thick GaAs base layer. A tungsten grating is embedded in the base layer and the Schottky depletion around the metal wires controls the vertical current. In this investigation, it is established that the high velocity of the hot electrons will prevent charge accumulation in the base layer. Thereby the dependence of the doping on the transconductance is lower than for the permeable base transistor. The HPBT is expected to have a unity-current gain cut-off frequency above 300 GHz

Keywords

bipolar transistors; heterojunction bipolar transistors; hot electron transistors; semiconductor device models; 300 GHz; AlGaAs heteroemitter; AlGaAs-W-GaAs; GaAs base layer; Schottky depletion; ballistic heterojunction permeable base transistor; doping; hot electron injection; metal wire; transconductance; tungsten grating; unity-current gain cut-off frequency; vertical device; Doping; Electrons; Gallium arsenide; Gratings; Heterojunctions; Numerical analysis; Performance analysis; Transconductance; Tungsten; Wires;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641349

Filename

641349