Title :
Gain and index measurements in GaAlAs quantum well lasers
Author :
Kesler, Morris P. ; Harder, Christoph
Author_Institution :
IBM Zurich Res. Lab., Switzerland
fDate :
7/1/1990 12:00:00 AM
Abstract :
Measurements of the modal gain and group index in GaAlAs single-quantum-well (SQW) lasers are presented. The elimination of substrate emission has allowed accurate results to be obtained even in the near-bandgap and below-bandgap spectral regions. Substantial lifetime broadening is observed, and the gain smoothly goes to zero as the bandgap is approached. The group velocity index measurements indicate a dispersion of -3.44 mu m/sup -1/.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; GaAlAs quantum well lasers; III-V semiconductor; below-bandgap spectral regions; dispersion; group velocity index; lifetime broadening; modal gain; substrate emission; Energy measurement; Gain measurement; Gallium arsenide; Laser modes; Optical scattering; Photonic band gap; Quantum well lasers; Semiconductor lasers; Substrates; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
