DocumentCode
1399760
Title
Gain and index measurements in GaAlAs quantum well lasers
Author
Kesler, Morris P. ; Harder, Christoph
Author_Institution
IBM Zurich Res. Lab., Switzerland
Volume
2
Issue
7
fYear
1990
fDate
7/1/1990 12:00:00 AM
Firstpage
464
Lastpage
466
Abstract
Measurements of the modal gain and group index in GaAlAs single-quantum-well (SQW) lasers are presented. The elimination of substrate emission has allowed accurate results to be obtained even in the near-bandgap and below-bandgap spectral regions. Substantial lifetime broadening is observed, and the gain smoothly goes to zero as the bandgap is approached. The group velocity index measurements indicate a dispersion of -3.44 mu m/sup -1/.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; GaAlAs quantum well lasers; III-V semiconductor; below-bandgap spectral regions; dispersion; group velocity index; lifetime broadening; modal gain; substrate emission; Energy measurement; Gain measurement; Gallium arsenide; Laser modes; Optical scattering; Photonic band gap; Quantum well lasers; Semiconductor lasers; Substrates; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.56626
Filename
56626
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