Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared

Author

Koerperick, Edwin J. ; Norton, Dennis T. ; Olesberg, Jonathon T. ; Olson, Benjamin V. ; Prineas, John P. ; Boggess, Thomas F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Iowa, Iowa City, IA, USA

Volume

47

Issue

1

fYear

2011

Firstpage

50

Lastpage

54

Abstract

Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm² mesa are demonstrated. Output power in excess of 600 μ.W was demonstrated from a 520 × 520 μm mesa at 1 A drive current and 50% duty cycle. Devices were grown by molecular beam epitaxy on lightly n-doped GaSb substrates and employed a 16-stage cascaded active region configuration to improve current efficiency and increase optical output. Emitting regions were coupled by semi-metallic tunnel junctions consisting of a p-GaSb layer and a thickness-graded InAs/GaSb superlattice stack.

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; light emitting diodes; molecular beam epitaxial growth; optical design techniques; optical fabrication; semiconductor superlattices; InAs-GaSb; cascaded superlattice light-emitting diodes; current 1 A; current efficiency; duty cycle; lightly n-doped substrate; long-wave infrared range; molecular beam epitaxy; semimetallic tunnel junctions; temperature 77 K; thickness-graded superlattice stack; Arrays; Cities and towns; Junctions; Light emitting diodes; Physics; Power generation; Substrates; Electroluminescence; light-emitting diodes; semiconductor growth; semiconductor superlattices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2072492

Filename

5662832