Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications

Author

Shimada, Hisayuki ; Hirano, Yuichi ; Ushiki, Takeo ; Ino, Kazuhide ; Ohmi, Tadahiro

Author_Institution

Tohoku Univ., Sendai, Japan

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

1903

Lastpage

1907

Abstract

The threshold voltages of thin-film fully-depleted silicon-on-insulator (FDSOI) nMOS and pMOS have been controlled by employing tantalum (Ta) as the gate materials. Ta-gate FDSOI MOSFET´s have excellent threshold voltage control for 1.0 V application on low impurity concentration SOI layers in both nMOS and pMOS. The low-temperature processing after the gate oxidation step leads to good on/off characteristics in Ta-gate SOI MOSFET´s because of no reaction between Ta gate electrode and SiO₂ gate insulator. This technology makes it possible to drastically decrease the number of the process steps for CMOS fabrication, because the same gate material is available for both nMOS and pMOS

Keywords

CMOS integrated circuits; MOSFET; integrated circuit metallisation; silicon-on-insulator; tantalum; thin film transistors; 1 V; CMOS fabrication; SiO₂ gate insulator; Ta-SiO₂-Si; Ta-gate thin-film SOI MOSFET; fully-depleted SOI MOSFETs; low impurity concentration SOI layers; low-power applications; low-temperature processing; nMOS devices; pMOS devices; threshold voltage control; Electrodes; Impurities; Insulation; MOS devices; Oxidation; Semiconductor thin films; Silicon on insulator technology; Threshold voltage; Transistors; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641359

Filename

641359