Effects of the inversion layer centroid on MOSFET behavior

Author

López-villanueva, Juan A. ; Cartujo-Casinello, Pedro ; Banqueri, Jesus ; Gámiz, F. ; Rodríguez, Salvador

Author_Institution

Dept. de Electronica, Facultad de Ciencias, Granada, Spain

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

1915

Lastpage

1922

Abstract

The effects of the average inversion-layer penetration, the inversion-layer centroid, on the inversion-charge density and the gate-to-channel capacitance have been analyzed. The quantum model has been used, and a variety of data have been obtained by self-consistently solving the Poisson and Schrodinger equations. An empirical expression for the centroid position that is valid for a wide range of electrical and technological variables has been obtained and has been applied to accurately model the inversion-layer density and capacitance

Keywords

MOSFET; Poisson distribution; Schrodinger equation; capacitance; inversion layers; semiconductor device models; MOSFET behavior; Poisson equation; Schrodinger equation; gate-to-channel capacitance; inversion layer centroid; inversion-charge density; inversion-layer density; quantum model; Electric potential; Electrons; Lead compounds; MOSFET circuits; Poisson equations; Predictive models; Quantum capacitance; Temperature; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641361

Filename

641361