Characteristics of SOI FET´s under pulsed conditions

A system for measuring output characteristics of FET´s using nanosecond pulses, instead of dc voltage and current measurement, is described. The measurement system is used to obtain the I-V characteristics of silicon-on-insulator (SOI) FET´s without the degradation resulting from self heating. Use of the technique to study partially depleted SOI FET´s with floating bodies shows that under pulsed conditions, their output curves have a history dependence. The physical mechanisms responsible for the history dependence are explained. Further understanding of the physical mechanisms is given by examination of single-shot pulse measurements. The role of transient and time-dependent phenomena in determining I-V curves is elucidated