High-power broad mesa structure AlGaAs/GaAs single-quantum-well edge-emitting LED

Author

Takagi, T. ; Imamoto, H. ; Sato, F. ; Imanaka, K. ; Shimura, M.

Author_Institution

OMRON Tateisi Electron. Co., Kyoto, Japan

Volume

1

Issue

1

fYear

1989

Firstpage

14

Lastpage

15

Abstract

An edge-emitting light-emitting diode (LED) with a wide emitting region for optical sensing and information processing which requires slit-shaped light sources is discussed. Through the use of a high-quantum efficiency single-quantum-well structure grown by molecular beam epitaxy an output power as high as 3 mW at an injected current of 100 mA with a 50- mu m-wide mesa structure is achieved at the 780-nm emission wavelength. A uniform and rectangular intensity profile, which is suitable for practical use, is obtained with a mesa-restricted structure.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; light emitting diodes; light sources; 100 mA; 3 mW; 780 nm; AlGaAs-GaAs; III-V semiconductors; edge-emitting LED; information processing; light-emitting diode; mesa structure; molecular beam epitaxy; optical sensing; slit-shaped light sources; Chromium; Etching; Gallium arsenide; Gold; Light emitting diodes; Molecular beam epitaxial growth; Optical sensors; Plasma applications; Power generation; Resists;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87880

Filename

87880