DocumentCode
1399855
Title
Planar, compatible OEIC´s based on multiquantum well structures
Author
Wada, O. ; Furuya, A. ; Makiuchi, M.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
1
Issue
1
fYear
1989
Firstpage
16
Lastpage
18
Abstract
An optoelectronic integrated-circuit (OEIC) structure, in which a variety of devices having different functions is built from a common multiquantum-well structure, is discussed. Basic operation of both a lateral-current-injection laser and a field-effect transistor is demonstrated using essentially the same AlGaAs/GaAs multiquantum-well structures.<>
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; integrated optoelectronics; semiconductor junction lasers; semiconductor quantum wells; AlGaAs-GaAs; III-V semiconductors; OEIC; field-effect transistor; lateral-current-injection laser; multiquantum well structures; optoelectronic integrated-circuit; Doping; FETs; Impurities; Integrated circuit technology; Optical device fabrication; Optical devices; Optical transmitters; Optoelectronic devices; Productivity; Quantum well devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.87881
Filename
87881
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