DocumentCode
1399864
Title
Dynamic frequency response for InGaAs/InAlAs multiple quantum well optical modulators
Author
Wakita, Koichi ; Kotaka, Isamu ; Kawamura, Yuichi ; Mikami, Osamu
Author_Institution
Opto-Electron. Labs., NTT, Kanagawa, Japan
Volume
1
Issue
1
fYear
1989
Firstpage
19
Lastpage
20
Abstract
The frequency response of InGaAs/InAlAs multiple-quantum-well (MQW) optical modulators and their dependence on incident light power are described. No decrease in small-signal modulation bandwidth was observed up to ten times the initial value of 1 mW. The mechanism of the frequency-response difference between InGaAs/InAlAs MQW modulators and InGaAs/InP modulators is discussed.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; III-V semiconductors; InGaAs-InAlAs; InGaAs-InP; MQW; frequency response; light power; multiple quantum well optical modulators; Absorption; Chirp modulation; Frequency response; High speed optical techniques; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical waveguides; Quantum well devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.87882
Filename
87882
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