Voltage measurement in GaAs Schottky barriers using optical phase modulation

Author

Koskowich, G.N. ; Soma, Mani

Author_Institution

Design, Test & Reliability Lab., Washington Univ., Seattle, WA, USA

Volume

9

Issue

9

fYear

1988

Firstpage

433

Lastpage

435

Abstract

What are thought to be the first measurements of applied voltage in a GaAs Schottky-barrier diode using optical phase modulation are presented. A theoretical model, based on the refractive-index perturbation in a Schottky-barrier depletion region, describing these measurements was derived and gives good agreement with the observe results. The large signal response and large frequency response of the measurement system are illustrated. This technique facilitates high-sensitivity measurements of voltages in integrated Schottky diodes.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; optical modulation; semiconductor technology; voltage measurement; GaAs; GaAs Schottky-barrier diode; Schottky-barrier depletion region; frequency response; high-sensitivity measurements; integrated Schottky diodes; measurements of applied voltage; observe results; optical phase modulation; refractive-index perturbation; semiconductors; signal response; theoretical model; voltage measurement; Frequency measurement; Frequency response; Gallium arsenide; Optical modulation; Optical refraction; Phase measurement; Phase modulation; Schottky barriers; Schottky diodes; Voltage measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6936

Filename

6936