DocumentCode
1399905
Title
Novel 896-element infrared Schottky detector line array
Author
Kurianski, J.M. ; Theden, U. ; Green, M.A. ; Storey, J.W.V.
Author_Institution
Joint Microelectron. Centre, New South Wales Univ., Kensington, NSW, Australia
Volume
9
Issue
9
fYear
1988
Firstpage
436
Lastpage
438
Abstract
The application of a mask-level butting technique to the design and fabrication of a very long, monolithic silicide infrared (IR) charge-coupled device (CCD) line array is described. This technique gives a continuous line of 896 IR sensing elements. The number of IR detectors (the length of the array) can be varied as required at the device dicing and packaging stages. The maximum array length is limited only by the silicon wafer size and the processing yield.<>
Keywords
CCD image sensors; Schottky-barrier diodes; infrared detectors; infrared imaging; integrated circuit technology; 896 element array; IC technology; IR detectors; IR sensing elements; Si wafer size; continuous line; fabrication; infrared Schottky detector line array; long CCD array; mask-level butting technique; maximum array length; monolithic silicide IR CCD line array; processing yield; Australia; Charge coupled devices; Implants; Infrared detectors; Microelectronics; Physics; Sensor arrays; Shift registers; Silicides; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.6937
Filename
6937
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