Improving breakdown voltage of SiC/Si heterojunction with graded structure by rapid thermal CVD technology

Author

Hwang, J.D. ; Fang, Y.K. ; Wu, K.H. ; Chou, S.M.

Author_Institution

Dept. of Electr. Eng., Chung Chou Inst. of Technol., Yuan Lin, Taiwan

Volume

44

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

2029

Lastpage

2031

Abstract

A novel graded process has been developed to improve the characteristics of SiC/Si heterojunction diode (HJD) by rapid thermal chemical vapor deposition (RTCVD). The graded process was obtained by varying the flow of C₃H₈ gas from 0-10 sccm with a ramp rate of 2 sccm/min. The developed SiC/Si heterojunction diodes exhibit good rectifying properties. At forward bias, the built-in voltage of 0.63 V and excellent ideality factor n=1.28 were obtained by C-V and I-V measurements, respectively. For reverse bias, the breakdown voltage more than 16 V with low leakage current density is 3.74×10 ^-4 A/cm² at 16.2 V reverse bias. Additionally, the SEM and TEM cross section have been employed to evidence that the graded method has a better SiC/Si interface than the conventional carbonization process

Keywords

characteristics measurement; chemical vapour deposition; electric breakdown; elemental semiconductors; leakage currents; power semiconductor diodes; rapid thermal processing; semiconductor materials; silicon; silicon compounds; 0.63 V; 16.2 V; C-V measurements; I-V measurements; SiC-Si; breakdown voltage; built-in voltage; forward bias; graded structure; heterojunction diode; ideality factor; leakage current density; ramp rate; rapid thermal CVD technology; rectifying properties; Chemical vapor deposition; Diodes; Gases; Heterojunction bipolar transistors; Lattices; Leakage current; Rapid thermal processing; Silicon carbide; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.641376

Filename

641376