Broad area phase-locked superlattice barrier quantum well laser diode

Author

Takagi, T. ; Imamoto, H. ; Sato, F. ; Imanaka, K. ; Shimura, M.

Author_Institution

Omrom Tateisi Electron. Co., Kyoto, Japan

Volume

1

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

73

Lastpage

74

Abstract

The lateral coherence of an extremely broad-area laser diode is examined. The device was fabricated using molecular-beam epitaxy (MBE). For a 350- mu m-wide mesa laser, a single-lobed phase-locked narrow beam was obtained owing to the use of a high-uniformity quantum well graded-index waveguide separate confinement heterostructure (GRIN-SCH) with a short-period (AlGaAs)(GaAs) superlattice MBE-fabricated barrier layer.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; semiconductor superlattices; 350 micron; GaAs-AlGaAs; extremely broad-area laser diode; graded-index waveguide separate confinement heterostructure; high uniformity; lateral coherence; mesa structure; molecular-beam epitaxy; semiconductor; single-lobed phase-locked narrow beam; superlattice barrier quantum well laser diode; Apertures; Diode lasers; Etching; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Pump lasers; Quantum well lasers; Solid lasers; Superlattices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87906

Filename

87906