EXTIGATE: The ultimate process architecture for submicron CMOS technologies

In this work, we present the novel process architecture EXTIGATE (EXtended Trench Isolation GAte TEchnology) which solves major problems associated with shallow-trench-isolation (STI) and n⁺/p⁺ dual workfunction gate technology. These achievements are realized without increasing process complexity or cost. Furthermore, the process window for planarization is enlarged leading to a robust, submicron n⁺/p⁺ gate STI-CMOS process ideally suited for low-voltage CMOS applications