Title :
Modeling of light-addressable potentiometric sensors
Author :
Colalongo, Luigi ; Verzellesi, Giovanni ; Passeri, Daniele ; Lui, A. ; Ciampolini, Paolo ; Rudan, Massimo V.
Author_Institution :
Dipt. di Matematica, Trento Univ., Italy
fDate :
11/1/1997 12:00:00 AM
Abstract :
In this paper, the extension of numerical simulation techniques to the analysis of light-addressable potentiometric sensors (LAPS) is discussed in detail. To this purpose, proper physical models of both the ion-sensitive and the photo-sensitive transduction mechanisms have been incorporated into the framework of a general-purpose device simulator. A self-consistent, accurate picture of charge transport within the device under the combined action of electrolyte ion layers and of luminous stimulus is recovered, which in turn allows for detailed analysis of the device behavior and for fine-tuning of the fabrication process. Extensive comparison with actual LAPS measurement has been performed, validating the tool and illustrating its flexibility and application range
Keywords :
chemical sensors; electrochemical analysis; hole density; intelligent sensors; microsensors; numerical analysis; photoconducting devices; semiconductor device models; HFIELDS; charge transport; electrolyte ion layers; electrolyte-insulator-semiconductor system; fabrication process; general-purpose device simulator; hole density distribution; ion-sensitive transduction mechanism; light-addressable potentiometric sensors; luminous stimulus; numerical simulation techniques; photosensitive transduction mechanism; physical models; smart chemical sensor; Capacitors; Electric fields; Electrodes; Fabrication; Insulation; Integrated circuit measurements; Numerical simulation; Photoconductivity; Semiconductor device measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on