Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching

Author

Chao, C.P. ; Hu, S.Y. ; Floyd, P. ; Law, K.-K. ; Corzine, S.W. ; Merz, J.L. ; Gossard, A.C. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

585

Lastpage

587

Abstract

In situ laser-monitored reactive ion etching is used to control ridge formation with 150-AA accuracy in fabricating double heterostructure InGaAs-GaAs strained layer single-quantum-well ridge waveguide lasers grown by molecular-beam epitaxy. Continuous-wave threshold current as low as 3.6 mA was obtained on devices with cleaved mirrors. High-reflectivity (96-70%) coated devices have the lowest threshold current at 2.1 mA.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 2.1 mA; 3.6 mA; CW threshold currents; InGaAs-GaAs; cleaved mirrors; double heterostructure; high-reflectivity coatings; in situ monitored; laser-monitored; low-threshold diode laser fabrication; molecular-beam epitaxy; reactive ion etching; ridge formation; ridge waveguide lasers; semiconductors; single-quantum-well; strained layer; Etching; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Monitoring; Optical control; Optical device fabrication; Strain control; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87921

Filename

87921