Co-integration of GaAs MESFET and Si CMOS circuits

Author

Shichijo, Hisashi ; Matyi, R.J. ; Taddiken, Albert H.

Author_Institution

Texas Instrum. Corp., Dallas, TX, USA

Volume

9

Issue

9

fYear

1988

Firstpage

444

Lastpage

446

Abstract

Co-integration of GaAs MESFET and Si CMOS circuits is demonstrated using GaAs-on-Si epitaxial growth on prefabricated Si wafers. This is thought to be the first report of circuit-level integration of the two types of devices in a coplanar structure. A 2- mu m gate Si CMOS ring oscillator has shown a minimum delay of 570 ps/gate, whereas on the same wafer a 1- mu m gate GaAs MESFET buffered-FET-logic (BFL) ring oscillator has a minimum delay of only 70 ps/gate. A composite ring oscillator consisting of Si CMOS invertors and GaAs MESFET invertors connected in a ring has been successfully fabricated.<>

Keywords

CMOS integrated circuits; III-V semiconductors; elemental semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit technology; invertors; molecular beam epitaxial growth; oscillators; semiconductor epitaxial layers; semiconductor growth; semiconductor junctions; semiconductor technology; silicon; 1 micron; 2 micron; 570 ps; 70 ps; BFL; GaAs BFL ring oscillator; GaAs MESFET; GaAs MESFET buffered-FET-logic; GaAs MESFET invertors; GaAs-Si heteroepitaxy; GaAs-on-Si epitaxial growth; MBE; Si CMOS circuits; Si CMOS invertors; Si CMOS ring oscillator; circuit-level integration; cointegration; composite ring oscillator; coplanar structure; prefabricated Si wafers; semiconductors; two types of devices; CMOS logic circuits; CMOS process; CMOS technology; Delay; Epitaxial growth; Gallium arsenide; Integrated circuit interconnections; MESFET circuits; Ring oscillators; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.6940

Filename

6940