Diagnostics of asymmetrically coated semiconductor lasers

Author

Hamel, W.A. ; Babeliowsky, M. ; Woerdman, J.P. ; Acket, G.A.

Author_Institution

Huygens Lab., Leiden Univ., Netherlands

Volume

3

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

600

Lastpage

602

Abstract

The authors present a simple diagnostic procedure for lasers that have a priori unknown facet reflectivities. The most important laser parameters that can be extracted are the cavity decay rate Gamma /sub c/ (equal to the inverse of the photon lifetime), the mirror loss coefficient alpha /sub m/ identical to -1/2 L In R/sub 1/R/sub 2/, the internal loss coefficient alpha /sub i/, the facet reflection coefficients R/sub 1/ and R/sub 2/, the spontaneous emission factor n/sub sp/, and the differential gain xi /sub l/. The authors have verified the procedure by applying it to lasers with a priori known facet reflection coefficients, these lasers were weakly index guided (VSIS and CSP types).<>

Keywords

laser theory; mirrors; reflectivity; semiconductor junction lasers; a priori unknown facet reflectivities; asymmetrically coated semiconductor lasers; cavity decay rate; diagnostic procedure; differential gain; diode lasers; facet reflection coefficients; internal loss coefficient; laser parameters; mirror loss coefficient; photon lifetime; spontaneous emission factor; weakly index guided; Current measurement; Laboratories; Optical arrays; Photodiodes; Power generation; Power lasers; Power measurement; Semiconductor device measurement; Semiconductor laser arrays; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.87926

Filename

87926