Hot-electron reliability and ESD latent damage

Author

Aur, Shian ; Chatterjee, Amitava ; Polgreen, Thomas

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2189

Lastpage

2193

Abstract

The impact of noncatastrophic electrostatic discharge (ESD) stress on hot-electron reliability as well as the effect of hot-electron (HE) injection on the ESD protection threshold are discussed. It is found that there is a factor-of-two-to-four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar although HE is a low-current long-time process and ESD is a high-current short-time process. Therefore, techniques for characterizing hot-electron degradation were applied to measure quantitatively the damage due to ESD stress. This technique showed electrical evidence of current filaments during an ESD discharge

Keywords

VLSI; electrostatic discharge; failure analysis; field effect integrated circuits; hot carriers; integrated circuit technology; reliability; ESD discharge; ESD latent damage; ESD protection threshold; VLSI; characterizing hot-electron degradation; current filaments; deterioration; electrical evidence; electrostatic discharge; hot electron injection effect; hot-electron reliability; low-level ESD stress; noncatastrophic ESD stress; Degradation; Electrostatic discharge; Helium; MOSFETs; Protection; Secondary generated hot electron injection; Stress; Substrates; Threshold current; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8793

Filename

8793