Lightly doped emitter HBT for low-power circuits

Author

Chang, C.E. ; Chen, P.F. ; Asbeck, P.M. ; Tran, L.T. ; Streit, D.C. ; Oki, A.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

7

Issue

11

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

377

Lastpage

379

Abstract

We report an approach to reduce the base-emitter capacitance in AlGaAs-GaAs heterojunction bipolar transistors (HBT´s) by adding a lightly doped emitter (LDE) region together with appropriate planar (δ) doping region to a conventional base-emitter junction. This improves both the f_t and β for low collector current density (J_c) operation while preserving the high peak f_t at high J_c. When applied to a current mode logic 128/129 programmable prescaler, the LDE HBT results in a reduction in power dissipation and improved bandwidth without any circuit modifications

Keywords

III-V semiconductors; aluminium compounds; bipolar MMIC; bipolar digital integrated circuits; bipolar logic circuits; current-mode logic; doping profiles; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; prescalers; δ doping region; AlGaAs-GaAs; CML programmable prescaler; TRW MMIC HBT process; base-emitter capacitance reduction; current mode logic; digital circuits; heterojunction bipolar transistors; lightly doped emitter HBT; low collector current density operation; low-power circuits; planar doping region; power dissipation; Capacitance; Current density; Digital circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; Logic circuits; Microwave devices; Power dissipation; Space technology;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.641426

Filename

641426