DocumentCode
1400269
Title
Novel low-cost, low-power modulator/demodulator using a single GaAs field effect transistor
Author
Carrez, F. ; Stolle, R.
Author_Institution
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume
145
Issue
3
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
165
Lastpage
169
Abstract
A novel type of transponder circuit for localisation and identification purposes is presented. The complete circuit contains only one semiconductor device, a `cold´ field effect transistor, which performs both the modulator and the demodulator functions. This makes possible the realisation of a low-cost, low-power, high-performance 10 GHz transponder in miniature format. The design of the circuit makes use of simple and reliable methods for the modulator function. The demodulator is a FET detector, which exploits the nonlinear channel resistance of the transistor instead of the Schottky barrier. A theory of this type of detector is given
Keywords
III-V semiconductors; MESFET circuits; gallium arsenide; microwave field effect transistors; modems; transponders; 10 GHz; FET detector; GaAs; GaAs field effect transistor; cold MESFET; low-power modulator/demodulator; nonlinear channel resistance; semiconductor device; transponder circuit;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19981871
Filename
694942
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