• DocumentCode
    1400269
  • Title

    Novel low-cost, low-power modulator/demodulator using a single GaAs field effect transistor

  • Author

    Carrez, F. ; Stolle, R.

  • Author_Institution
    Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
  • Volume
    145
  • Issue
    3
  • fYear
    1998
  • fDate
    6/1/1998 12:00:00 AM
  • Firstpage
    165
  • Lastpage
    169
  • Abstract
    A novel type of transponder circuit for localisation and identification purposes is presented. The complete circuit contains only one semiconductor device, a `cold´ field effect transistor, which performs both the modulator and the demodulator functions. This makes possible the realisation of a low-cost, low-power, high-performance 10 GHz transponder in miniature format. The design of the circuit makes use of simple and reliable methods for the modulator function. The demodulator is a FET detector, which exploits the nonlinear channel resistance of the transistor instead of the Schottky barrier. A theory of this type of detector is given
  • Keywords
    III-V semiconductors; MESFET circuits; gallium arsenide; microwave field effect transistors; modems; transponders; 10 GHz; FET detector; GaAs; GaAs field effect transistor; cold MESFET; low-power modulator/demodulator; nonlinear channel resistance; semiconductor device; transponder circuit;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:19981871
  • Filename
    694942