Title :
Measurement of carrier lifetime and linewidth enhancement factor for 1.5- mu m ridge-waveguide laser amplifier
Author :
Storkfelt, N. ; Mikkelsen, B. ; Olesen, D.S. ; Yamaguchi, M. ; Stubkjaer, K.E.
Author_Institution :
Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
fDate :
7/1/1991 12:00:00 AM
Abstract :
Semiconductor optical amplifiers are used for investigation of the effective carrier lifetime and the linewidth enhancement factor. Contrary to semiconductor lasers, semiconductor optical amplifiers allow measurement at high levels of injected carrier density. The carrier lifetime and the linewidth enhancement factor are measured with a simple dynamic self-heterodyne method. Carrier lifetimes of 750 ps at the threshold current for the SOA without antireflection coating and 200 ps at high injection have been found. The linewidth enhancement factor is measured to be between 4 and 17 which fits with a simple empirical expression.<>
Keywords :
carrier density; carrier lifetime; laser variables measurement; optical waveguides; semiconductor junction lasers; spectral line breadth; 1.5 micron; 200 ps; 750 ps; diode lasers; dynamic self-heterodyne method; effective carrier lifetime; high injection; injected carrier density; linewidth enhancement factor; ridge-waveguide laser amplifier; semiconductor optical amplifiers; spectral linewidth; threshold current; Amplitude modulation; Charge carrier density; Charge carrier lifetime; Frequency modulation; Optical amplifiers; Optical mixing; Optical refraction; Optical variables control; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
