DocumentCode
1400295
Title
Turn-off analysis of PT and NPT IGBTs in zero-current switching
Author
Lefebvre, S. ; Forest, F. ; Costa, F. ; Arnould, J.
Author_Institution
ECS, ENSEA, Cergy-Pontoise, France
Volume
145
Issue
3
fYear
1998
fDate
6/1/1998 12:00:00 AM
Firstpage
185
Lastpage
191
Abstract
The lower turn-off losses in zero-current switching (ZCS) converters as compared to the conventional hard switching mode using insulated gate bipolar transistors (IGBT), depends on the intrinsic bipolar junction transistor structure. Whichever the IGBT type may be, a significant part of the stored charge is removed from the base of the intrinsic bipolar junction transistor in ZCS because of the spontaneous current decrease, and because of the antiparallel diode turn-on. The turn-off loss reduction is especially significant when the carrier lifetime is low
Keywords
insulated gate bipolar transistors; power convertors; switching circuits; bipolar junction transistor; carrier lifetime; insulated gate bipolar transistor; nonpunch-through IGBT; punch-through IGBT; turn-off loss; zero-current switching converter;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19981874
Filename
694946
Link To Document