The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

Author

Kao, Chyuan Haur ; Lai, Chao Sung ; Lee, Chung Len

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

18

Issue

11

fYear

1997

Firstpage

526

Lastpage

528

Abstract

A TEOS oxide deposited on the phosphorus in situ doped polysilicon annealed with RTA is shown to have good electrical characteristics such as a high breakdown field (>12 MV/cm), especially for the positive bias, and a large Qbd (26 Coul/cm/sup 2/). The improvement is believed to be due to the relatively smooth surface of the in situ doped polysilicon and the reduction of the trapping density by RTA.

Keywords

chemical vapour deposition; dielectric thin films; electric breakdown; elemental semiconductors; oxidation; phosphorus; rapid thermal annealing; semiconductor-insulator boundaries; silicon; AFM; RTA; Si:P; SiO/sub 2/-Si:P; TEOS CVD oxide deposition; charge to breakdown; electrical characteristics; high breakdown field; in situ P doped polysilicon; inter-polyoxide; polysilicon surface smoothness; positive bias; rapid thermal annealing; trapping density reduction; Atomic force microscopy; Chaos; Design for quality; Electric breakdown; Electric variables; Grain boundaries; Nonvolatile memory; Rapid thermal annealing; Surface morphology; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641434

Filename

641434