Title :
Novel ferroelectric epitaxial (Ba,Sr)TiO/sub 3/ capacitor for deep sub-micron memory applications
Author :
Kawakubo, T. ; Abe, K. ; Komatsu, S. ; Sano, K. ; Yanase, N. ; Mochizuki, H.
Author_Institution :
Labs. of Mater. & Devices Res., Toshiba Corp., Kawasaki, Japan
Abstract :
A novel ferroelectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ (BSTO)/SrRuO/sub 3/ (SRO) heteroepitaxial technique on Si and strontium titanate substrates. Distinct ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BSTO capacitor showed distinct ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far. Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.
Keywords :
barium compounds; dielectric hysteresis; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; reliability; sputter deposition; strontium compounds; vapour phase epitaxial growth; (Ba,Sr)TiO/sub 3//SrRuO/sub 3/ heteroepitaxial technique; BaSrTiO/sub 3/-SrRuO/sub 3/; RF magnetron sputtering; Si; Si substrate; SrTiO/sub 3/; SrTiO/sub 3/ substrate; c-axis elongation; deep submicron memory applications; ferroelectric capacitor cell; ferroelectric properties; lattice mismatch; reliability; submicron Si process compatibility; Capacitors; Dielectrics; Electrodes; Ferroelectric films; Ferroelectric materials; Hysteresis; Lattices; Polarization; Pulse measurements; Substrates;
Journal_Title :
Electron Device Letters, IEEE
