• DocumentCode
    1400323
  • Title

    Numerical and analytic techniques to study capacitive RF discharges

  • Author

    Gupta, N. ; Raju, G. R Govinda

  • Author_Institution
    Dept. of Electr. Eng., Windsor Univ., Ont., Canada
  • Volume
    7
  • Issue
    5
  • fYear
    2000
  • fDate
    10/1/2000 12:00:00 AM
  • Firstpage
    705
  • Lastpage
    720
  • Abstract
    Capacitively coupled RF plasma sources are used extensively in the microelectronics industry for commercial production as well as laboratory research and development. This paper deals with the physics of the processes involved and development, both theoretical and analytical, that have helped in understanding the discharge processes. The review begins with a description of the RF discharge. A literature survey provides the experimental efforts that have been directed towards investigating the physics of the capacitively coupled discharges. Measurements of the various plasma parameters are dealt with. Analytical and numerical methods that have been successfully used to model the discharge processes are treated in considerable detail. The paper concludes with a brief comparison of the various techniques
  • Keywords
    high-frequency discharges; integrated circuit technology; plasma applications; reviews; capacitive RF discharges; capacitively coupled RF plasma sources; discharge processes; microelectronics industry; plasma parameters; Electrodes; Etching; Fault location; Inductors; Physics; Plasma applications; Plasma chemistry; Plasma materials processing; Radio frequency; Surface discharges;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/94.879364
  • Filename
    879364