Title :
Total dose radiation response of plasma-damaged NMOS devices
Author :
Yue, Jerry ; Lo, Eddy ; Flanery, Mike
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Abstract :
Plasma-damaged NMOS devices were subjected to the X-ray total dose irradiation. Unlike the traditional hot-carrier or Fowler-Nordheim (F-N) stress where the hole trap generation is less pronounced, this study shows enhanced hole trap and interface trap generation on plasma-damaged devices after total dose irradiation.
Keywords :
MOSFET; X-ray effects; hole traps; interface states; plasma applications; semiconductor device testing; voltage distribution; NMOSFETs; X-ray total dose irradiation; high field stress effect; hole trap generation; interface trap generation; plasma-damaged NMOS devices; threshold voltage distribution; total dose radiation response; Electron traps; MOS devices; MOSFETs; Plasma applications; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma sources; Plasma x-ray sources; Stress;
Journal_Title :
Electron Device Letters, IEEE
