Reduction of hot-carrier generation in 0.1-μm recessed channel nMOSFET with laterally graded channel doping profile

Author

Jeongho Lyu ; Byung-Gook Park ; Kukjin Chun ; Jong Duk Lee

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

18

Issue

11

fYear

1997

Firstpage

535

Lastpage

537

Abstract

To investigate the substrate current characteristics of a recessed channel structure with graded channel doping profile, we have fabricated and simulated the Inverted-Sidewall Recessed-Channel (ISRC) nMOSFET and compared it with a conventional planar nMOSFET. Experimentally, the ISRC nMOSFET shows about 30% reduction of substrate current, even though the drain current is almost the same. At 0.12-μm channel length, the I/sub SUB//I/sub DS/ value of the conventional nMOSFET is measured to be 1.68 times higher than that of the ISRC nMOSFET. Also, using simulation, it is verified that the reduction of electric field at the drain junction of ISRC nMOSFET results from the graded channel doping profile, not from the recessed channel structure.

Keywords

MOSFET; doping profiles; hot carriers; ion implantation; semiconductor device models; 0.12 mum; channel length; drain current; drain junction electric field; hot-carrier generation reduction; inverted-sidewall recessed-channel nMOSFET; ion implantation; laterally graded channel doping profile; recessed channel nMOSFET; simulation; substrate current characteristics; Character generation; Degradation; Doping profiles; Fabrication; Hot carriers; Length measurement; MOSFET circuits; Oxidation; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641437

Filename

641437