Title :
An InP/InGaAs p-i-n/HBT monolithic transimpedance photoreceiver
Author :
Chandrasekhar, S. ; Johnson, B.C. ; Bonnemason, M. ; Tokumitsu, E. ; Gnauck, A.H. ; Dentai, A.G. ; Joyner, C.H. ; Perino, J.S. ; Qua, G.J. ; Monberg, E.M.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A monolithically integrated 1-Gb/s p-i-n/HBT transimpedance photoreceiver is discussed. The optoelectronic integrated circuit (OEIC) was made from metalorganic vapor-phase epitaxy (MOVPE)-grown InP/InGaAs heterostructures and had a transimpedance of 1375 Omega , a sensitivity of -26.1 dBm, >25-dB dynamic range, and a 500-MHz bandwidth.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; p-i-n diodes; photodetectors; receivers; vapour phase epitaxial growth; 1 Gbit/s; 500 MHz; InP-InGaAs; dynamic range; metalorganic vapor-phase epitaxy; monolithically integrated; optoelectronic integrated circuit; p-i-n/HBT monolithic transimpedance photoreceiver; sensitivity; Bandwidth; Circuits; FETs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optoelectronic devices; PIN photodiodes; Preamplifiers; Resistors;
Journal_Title :
Photonics Technology Letters, IEEE
