Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMTs

Author

Arai, Kunihiro ; Matsuzaki, Hideaki ; Maezawa, Koichi ; Otsuji, Taiichi ; Yamamoto, Masafumi

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

Volume

18

Issue

11

fYear

1997

Firstpage

544

Lastpage

546

Abstract

A static frequency divider constructed with resonant tunneling diodes (RTDs) in combination with HEMTs is proposed and demonstrated. The circuit complexity is reduced drastically. The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology. Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches. Each sub-circuit consists of only three components. This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology. The strong nonlinear I-V characteristics of RTD´s are fully utilized for this reduction.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect logic circuits; frequency dividers; gallium arsenide; indium compounds; integrated circuit measurement; resonant tunnelling diodes; D-latches; HEMT; InAlAs-InGaAs; InGaAs-InAs-AlAs; InP; InP-based RTD/HEMT monolithic integration technology; circuit complexity reduction; nonlinear I-V characteristics; quasi-static test pattern; resonant tunneling diodes; room temperature; static frequency divider; sub-circuits; Circuit testing; Complexity theory; Diodes; Frequency conversion; HEMTs; Integrated circuit interconnections; Logic design; Monolithic integrated circuits; Resonant tunneling devices; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641440

Filename

641440