Title :
Very high temperature operation of diamond Schottky diode
Author :
Vescan, A. ; Daumiller, I. ; Gluche, P. ; Ebert, W. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
For the first time, the operating temperature of a Schottky diode structure has been pushed to 1000/spl deg/C. The diode structure consists of a Si-based Schottky material deposited onto a homoepitaxial boron doped diamond surface. At high temperatures, the forward I-V characteristics are dominated by the thermionic emission (n/spl ap/1.01) across a barrier of 1.9 eV height. The reverse characteristics are still dominated by thermally activated defects. The series resistance shows thermal activation associated with the boron doping.
Keywords :
Schottky diodes; boron; diamond; doping profiles; elemental semiconductors; high-temperature techniques; leakage currents; semiconductor doping; 25 to 1000 C; C:B; Richardson plot; Si-C:B; Si-based Schottky material; diamond Schottky diode; forward I-V characteristics; homoepitaxial B-doped diamond surface; operating temperature; reverse characteristics; series resistance; thermal activation; thermally activated defects; thermionic emission; very high temperature operation; Boron; Doping profiles; Photonic band gap; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Schottky diodes; Semiconductor diodes; Temperature distribution; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
