DocumentCode
1400386
Title
Effects of localized interface defects caused by hot-carrier stress in n-channel MOSFETs at low temperature
Author
Nguyen-Duc, Chien ; Cristoloveanu, Sorin ; Reimbold, Gilles
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSER-INPG, Grenoble, France
Volume
9
Issue
9
fYear
1988
Firstpage
479
Lastpage
481
Abstract
Hot-carrier stressing was carried out on 1- mu m n-type MOSFETs at 77 K with fixed drain voltage V/sub d/=5.5 V and gate voltage V/sub g/ varying from 1.5 to 6.5 V. It was found that the maximum transconductance degradation Delta G/sub m/ and threshold voltage shift Delta V/sub t/, do not occur at the same V/sub g/. As well, Delta K/sub t/ is very small for the V/sub g/>
Keywords
hot carriers; insulated gate field effect transistors; 1 micron; 1.5 to 6.5 V; 77 K; drain voltage; gate voltage; hot carrier stressing; hot-carrier stress; interface states effect; localized interface defects; low temperature; n-channel MOSFETs; substrate current; threshold voltage shift; transconductance curves; transconductance degradation; Degradation; Hot carrier effects; Hot carriers; Laboratories; MOSFETs; Stress; Substrates; Temperature; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.6951
Filename
6951
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