High-speed InGaP/GaAs transistors with a sidewall base contact structure

Author

Mochizuki, Kazuhiro ; Tanoue, Tomonoriu ; Oka, Tohru ; Ouchi, Kiyoshi ; Hirata, Kohji ; Nakamura, Tohru

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

18

Issue

11

fYear

1997

Firstpage

562

Lastpage

564

Abstract

We have fabricated InGaP/GaAs double heterojunction bipolar transistors with a sidewall base contact structure. These transistors operate in both emitter-up and emitter-down modes. Symmetric characteristics of the cutoff frequency f/sub T/=68 GHz and the maximum oscillation frequency f/sub max/=31 GHz were obtained at a base-collector bias V/sub BC/ of 0 V. For emitter-down operation, f/sub T/ was found to reach a maximum of 78 GHz when the base-collector junction was forward biased at 0.9 V. The product of f/sub T/ for emitter-down operation and f/sub T/ for emitter-up operation was 5.3/spl times/10/sup 3/ GHz/sup 2/, which is about six times that of previously reported SiGe heterojunction bipolar transistors.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor growth; 0 V; 0.9 V; 31 GHz; 68 GHz; 78 GHz; GSMBE; InGaP-GaAs; InGaP/GaAs double heterojunction bipolar transistors; SiO/sub 2/; base-collector bias; base-collector junction biasing; cutoff frequency; emitter-down operation; emitter-up operation; high-speed InGaP/GaAs transistors; maximum oscillation frequency; sidewall base contact structure; symmetric characteristics; Cutoff frequency; Double heterojunction bipolar transistors; Electrodes; Electrons; Fabrication; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Sputter etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.641446

Filename

641446