Title :
Laser compatible waveguide electroabsorption modulator with high contrast and low operating voltage in GaAs/AlGaAs
Author :
Moss, D. ; Landheer, D. ; Delage, A. ; Chatenoud, F. ; Dion, M.
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
7/1/1991 12:00:00 AM
Abstract :
The authors demonstrate a SQW-GRINSCH ridge-waveguide electroabsorption modulator in GaAs/Al/sub x/Ga/sub 1-x/As that has a very high contrast ratio and low operating voltage and also acts as a laser with relatively low threshold current. They achieve contrast ratios of 10 dB/100 mu m of cavity length with an operating voltage of less than -4 V. In addition, when operated as laser, the device exhibits a threshold current of 25 mA. The active layer has a capacitance of 205 pF/mm/sup 2/ which would allow the fabrication of a device with a modulation bandwidth of over 20 GHz. The laser operated at a wavelength only 2-3 nm shorter than the optimum modulation wavelength.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; integrated optics; optical modulation; optical waveguide components; semiconductor junction lasers; semiconductor quantum wells; 25 mA; GaAs-AlGaAs; III-V semiconductor; SQW-GRINSCH ridge-waveguide electroabsorption modulator; active layer; capacitance; cavity length; high contrast; low operating voltage; low threshold current laser; modulation bandwidth; Gallium arsenide; Laser modes; Low voltage; Optical devices; Optical modulation; Quantum well lasers; Surface morphology; Threshold current; Threshold voltage; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
