Title :
Heterojunction InAlAs/InP MESFETs grown by OMVPE
Author :
Fathimulla, Mohammed A. ; Loughran, T. ; Stecker, L. ; Hempfling, E. ; Mattingly, M. ; Aina, Olaleye
Author_Institution :
Bendix Aerosp. Technol. Center, Columbia, MD, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Lattice-matched InAlAs/n-InP and InAlAs/n/sup +/-InP heterostructure MESFETs with extrinsic transconductances of 220 and 155 mS/mm, respectively, have been fabricated on semi-insulating InP substrates. Maximum stable gains of 11.5 dB for the 1.25- mu m-gate n-InP channel and 10 dB for the 1.0- mu m-gate n/sup +/-InP channel devices were measured at 10 GHz. An extrapolated f/sub max/ of 42 GHz was obtained for the n/sup +/-channel MESFET.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 1.25 micron; 10 GHz; 10 dB; 11.5 dB; 155 mS; 220 mS; 42 GHz; InAlAs-InP; InP substrates; OMVPE; extrinsic transconductances; gate length; heterostructure MESFETs; maximum stable gains; n/sup +/-channel MESFET; Electron mobility; Etching; Heterojunctions; Indium compounds; Indium phosphide; MESFETs; Metallization; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
