DocumentCode
1400521
Title
Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz
Author
Wake, D. ; Blank, L.C. ; Walling, R.H. ; Henning, I.D.
Author_Institution
British Telecom Res. Lab., Ipswich, UK
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
226
Lastpage
228
Abstract
Top-illuminated InGaAs p-i-n photodiodes have been fabricated from metal organic vapor-phase epitaxy (MOVPE) material, grown on semi-insulating InP substrates. A flat frequency response to 26 GHz has been measured, which is the highest figure yet reported for such devices. The predicted 3-dB bandwidth of these devices is 35 GHz.<>
Keywords
III-V semiconductors; frequency response; gallium arsenide; indium compounds; photodiodes; 26 GHz; 35 GHz; InGaAs-InP; InP substrates; MOVPE; bandwidth; flat frequency response; top illuminated p-i-n photodiodes; Bandwidth; Epitaxial growth; Epitaxial layers; Frequency response; Indium gallium arsenide; Indium phosphide; Inorganic materials; Organic materials; PIN photodiodes; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.698
Filename
698
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