Title :
Top-illuminated InGaAs/InP p-i-n photodiodes with a 3-dB bandwidth in excess of 26 GHz
Author :
Wake, D. ; Blank, L.C. ; Walling, R.H. ; Henning, I.D.
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
fDate :
5/1/1988 12:00:00 AM
Abstract :
Top-illuminated InGaAs p-i-n photodiodes have been fabricated from metal organic vapor-phase epitaxy (MOVPE) material, grown on semi-insulating InP substrates. A flat frequency response to 26 GHz has been measured, which is the highest figure yet reported for such devices. The predicted 3-dB bandwidth of these devices is 35 GHz.<>
Keywords :
III-V semiconductors; frequency response; gallium arsenide; indium compounds; photodiodes; 26 GHz; 35 GHz; InGaAs-InP; InP substrates; MOVPE; bandwidth; flat frequency response; top illuminated p-i-n photodiodes; Bandwidth; Epitaxial growth; Epitaxial layers; Frequency response; Indium gallium arsenide; Indium phosphide; Inorganic materials; Organic materials; PIN photodiodes; Substrates;
Journal_Title :
Electron Device Letters, IEEE
