Author :
Kizilyalli, Isik C. ; Artaki, Michael ; Chandra, Amitabh
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
Monte Carlo methods are used to compare electronic transport and device behavior in n+-AlxGa1-xAs/GaAs modulation-doped field-effect transistors (MODFETs) at 300 K for x =0.10, 0.15, 0.22, 0.30, 0.35, and 0.40. The differences between the x=0.22 and x=0.30 MODFETs with respect to parasitic conduction in AlxGa1-xAs, gate currents, and switching times, are of particular interest. The donor-related deep levels in AlxGa1-xAs, are disregarded by assuming all donors to be fully ionized, and the focus is only on the confinement and transport of the carriers. The following quantities are studied in detail: transfer characteristics (ID versus V G), transconductance (gm), switching speeds (τON), parasitic conduction in AlxGa 1-xAs, gate current (IG), average electron velocities and energies in GaAs and AlxGa1-x As, electron concentration in the device domain, k-space transfer (to low mobility L and X valleys), and details of the real-space transfer process
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor device models; 300 K; AlxGa1-xAs-GaAs field effect transistor; MODFET; Monte Carlo methods; average electron velocities; carrier confinement; device geometry; donor-related deep levels; electron concentration; electron energy; electronic transport; ensemble Monte Carlo model; gate currents; k-space transfer; modulation-doped field-effect transistors; parasitic conduction; real-space transfer process; simulation; switching speeds; switching times; transconductance; transfer characteristics; Artificial intelligence; Electrons; Gallium arsenide; Geometry; HEMTs; MODFETs; Monte Carlo methods; Optical scattering; Solid modeling; Threshold voltage;
