Title :
8.5 MW GaAs pulse biased switch optically controlled by 2-D laser diode arrays
Author :
Rosen, A. ; Stabile, P.J. ; Zutavern, F.J. ; Loubriel, G.M. ; Helgeson, W.D. ; O´Malley, M.W. ; McLaughlin, D.L.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
The development of a compact, all solid-state switch system that has switched up to 8.5 MW into a 38- Omega load is described. The system uses a 2-D laser diode array with a peak power of 850 W to trigger a 1.5-cm-long GaAs photoconductor into a high-gain conduction mode known as lock on. The highest power switch was pulse-charged to 55 kV and delivered 470 A to a 38- Omega load in a 160-ns-long pulse.<>
Keywords :
III-V semiconductors; gallium arsenide; laser beam applications; optical switches; semiconductor junction lasers; 1.5 cm; 160 ns; 2D laser diode arrays; 470 A; 55 kV; 8.5 MW; GaAs pulse biased switch; all solid-state switch; high-gain conduction mode; lock on; optically controlled; photoconductor; pulse-charged; Diode lasers; Gallium arsenide; Laser modes; Optical arrays; Optical control; Optical pulses; Optical switches; Photoconductivity; Semiconductor laser arrays; Solid state circuits;
Journal_Title :
Photonics Technology Letters, IEEE
