Title :
Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing
Author :
King, A. ; Gronet, C.M. ; Gibbons, J.F. ; Wilson, S.D.
Author_Institution :
Stanford Electron. Lab., CA, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Forward current ideality factors of 1.01+or-0.3% were obtained over a large current range extending down to 1 pA. Reverse current densities measured 3.5+or-1.2 nA/cm/sup 2/ at a reverse bias of -5 V. Breakdown occurred at the expected value of -22 V and displayed a very sharp current rise of 30 decades/V. Extremely uniform light emission from the junction was observed under a microscope at breakdown, this phenomenon is a visual indication that the material is of high quality and suitable for high-performance minority-carrier devices.<>
Keywords :
current density; electric breakdown of solids; elemental semiconductors; p-n homojunctions; semiconductor diodes; semiconductor growth; silicon; vapour phase epitaxial growth; Si; VPE; breakdown; electrical characterisation; forward current ideality factors; high-performance minority-carrier devices; in situ epitaxial growth; light emission; limited reaction processing; mesa p-n junction diodes; p-n junctions; reverse current density; Boron; Breakdown voltage; Current measurement; Density measurement; Electric breakdown; Leakage current; P-n junctions; Pollution measurement; Semiconductor materials; Substrates;
Journal_Title :
Electron Device Letters, IEEE
