Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/ junction formation in submicrometer CMOS devices

Submicrometer CMOS transistors require shallow junctions to minimize punchthrough and short-channel effects. Salicide technology is a very attractive metallization scheme to solve many CMOS scaling problems. However, to achieve a shallow junction with a salicide structure requires careful optimization for device design tradeoffs. Several proposed techniques to form shallow titanium silicide junctions are critically examined. Boron, BF/sub 2/, arsenic, and phosphorus dopants were used to study the process parameters for low-leakage TiSi/sub 2/ p/sup +//n and n/sup +//p junctions in submicrometer CMOS applications. It is concluded that the dopant drive-out (DDO) from the TiSi/sub 2/ layer to form a shallow junction scheme is not an efficient method for titanium salicide structure; poor device performance and unacceptably leaky junctions are obtained by this scheme. The conventional post junction salicide (PJS) scheme can produce shallow n/sup +//p and p/sup +//n junctions with junction depths of 0.12 to 0.20 mu m below the TiSi/sub 2/. Deep submicrometer CMOS devices with channel length of 0.40 to 0.45 mu m can be fabricated with such junctions.<>