Dynamic suppression of interface-state dark current in buried-channel CCDs

It is shown that the time dependence of the carrier generation rate at a depleted surface can be exploited to completely suppress interface-state dark current in buried-channel charge-coupled devices (CCDs). When a surface is switched from an inverted to a depleted state, the generation current recovers with a time constant which is strongly temperature dependent and varies from a few milliseconds at room temperature to nearly 3 h at -80°C. This property can be applied to three- and four-phase CCDs by exchanging charge packets between adjacent phases within a cell at a rate that ensures that each phase remains out of inversion for time that is short in comparison to the recovery time. Measurements of this effect have been made on a CCD imager over the temperature range from -40°C to +22°C, and the results agree well with theory