Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs

Author

Iwamuro, Noriyuki ; Okamoto, Akinobu ; Tagami, Saburo ; Motoyama, Hiroshi

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan

Volume

38

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

303

Lastpage

309

Abstract

The mechanisms of destructive failure of an insulated gate bipolar transistor (IGBT) at short-circuit state are discussed. Results from two-dimensional numerical simulation of p-channel and n-channel IGBTs are presented. It is found that there are two types of destructive failure mechanisms: a secondary breakdown and a latchup. Which type is dominant in p-channel and n-channel IGBTs depends on an absolute value of forward voltage |V_CE|. At moderately low |V _CE|, the p-channel IGBT is destroyed by secondary breakdown, and the n-channel IGBT, by latchup. This is due to the difference of a type of flowing carrier crossing a base-collector junction of wide base transistor and ionization rates of electrons and holes

Keywords

failure analysis; insulated gate bipolar transistors; numerical methods; semiconductor device models; FBIDES; destructive failure mechanisms; forward voltage; insulated gate bipolar transistor; ionization rates; latchup; n-channel IGBT; numerical analysis; p-channel IGBT; secondary breakdown; short-circuit safe operating area; short-circuit state; two-dimensional numerical simulation; wide base transistor; Analytical models; Charge carrier processes; Computational modeling; Equations; Insulated gate bipolar transistors; MOSFET circuits; Numerical analysis; Predictive models; Radiative recombination; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.69910

Filename

69910