Title :
Numerical analysis of short-circuit safe operating area for p-channel and n-channel IGBTs
Author :
Iwamuro, Noriyuki ; Okamoto, Akinobu ; Tagami, Saburo ; Motoyama, Hiroshi
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan
fDate :
2/1/1991 12:00:00 AM
Abstract :
The mechanisms of destructive failure of an insulated gate bipolar transistor (IGBT) at short-circuit state are discussed. Results from two-dimensional numerical simulation of p-channel and n-channel IGBTs are presented. It is found that there are two types of destructive failure mechanisms: a secondary breakdown and a latchup. Which type is dominant in p-channel and n-channel IGBTs depends on an absolute value of forward voltage |VCE|. At moderately low |V CE|, the p-channel IGBT is destroyed by secondary breakdown, and the n-channel IGBT, by latchup. This is due to the difference of a type of flowing carrier crossing a base-collector junction of wide base transistor and ionization rates of electrons and holes
Keywords :
failure analysis; insulated gate bipolar transistors; numerical methods; semiconductor device models; FBIDES; destructive failure mechanisms; forward voltage; insulated gate bipolar transistor; ionization rates; latchup; n-channel IGBT; numerical analysis; p-channel IGBT; secondary breakdown; short-circuit safe operating area; short-circuit state; two-dimensional numerical simulation; wide base transistor; Analytical models; Charge carrier processes; Computational modeling; Equations; Insulated gate bipolar transistors; MOSFET circuits; Numerical analysis; Predictive models; Radiative recombination; Semiconductor optical amplifiers;
Journal_Title :
Electron Devices, IEEE Transactions on
