Title :
Low-frequency noise in depletion-mode SIMOX MOS transistors
Author :
Elewa, Tarek ; Boukriss, Boubaker ; Haddara, Hisham S. ; Chovet, Alain ; Cristoloveanu, Sorin
Author_Institution :
Lab. de Phys. des Composants a Semicond., Grenoble, France
fDate :
2/1/1991 12:00:00 AM
Abstract :
Low-frequency noise measurements in depletion-mode SIMOX MOSFETs are reported. A simple model provides a reliable interpretation of the low-frequency noise in multi-interface depletion-mode transistors. An experimental procedure to separate noise contributions of front and back interfaces from noise due to bulk carrier fluctuations is described. The noises generated in the thin Si film and at the two Si-SiO2 interfaces can be identified and characterized independently in terms of bulk properties and interface trap densities. Single-level traps at the back interface and defects in the volume are detected in high-temperature annealed materials
Keywords :
MOS integrated circuits; electron device noise; electron traps; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; LF noise; MOSFETs; SIMOX MOS transistors; Si-SiO2 interfaces; bulk carrier fluctuations; bulk properties; depletion-mode; high-temperature annealed materials; interface trap densities; low-frequency noise; model; Crystalline materials; Fluctuations; Low-frequency noise; MOSFETs; Noise generators; Noise level; Noise measurement; Semiconductor device noise; Semiconductor films; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
