Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET

This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson´s equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length ( L_g) to channel thickness ( T_ch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness ( T_BI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.