Building-in reliability into VLSI junctions

Author

Mogul, H.C. ; McPherson, J.W. ; Parrill, T.M.

Author_Institution

Deep Sub-Micron ASP Productization, Texas Instrum. Inc., Dallas, TX, USA

Volume

10

Issue

4

fYear

1997

fDate

11/1/1997 12:00:00 AM

Firstpage

495

Lastpage

497

Abstract

A nondestructive test is presented for monitoring junction quality and reliability in a manufacturing environment. Using a properly selected two-temperature measurement of the activation energy associated with reverse-biased junction leakage, it was demonstrated that the activation energy was more sensitive to slight changes in junction quality than was the commonly used method of monitoring the ideality factor. The activation energy method was found to be an effective and efficient metric for controlling normal process variation. As such, this method was found to be an excellent tool for building-in quality and reliability into junctions

Keywords

VLSI; integrated circuit reliability; integrated circuit testing; leakage currents; nondestructive testing; production testing; VLSI junctions; activation energy; junction quality; manufacturing environment; nondestructive test; process variation control; reliability; reverse-biased junction leakage; two-temperature measurement; Energy measurement; Leakage current; Manufacturing; Monitoring; Pollution measurement; Process control; Semiconductor device reliability; Semiconductor diodes; Temperature dependence; Very large scale integration;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.641491

Filename

641491